Since 2010 he works for CEA: researching, designing and programming reflectometry location fault system for all type of wire. Inventor of a dozen of patents and author of papers in sensors field he is chief project since 2013. Chief of CEA-Nicomatic joint laboratory since 2014.
Publications
2015
OMTDR Based Integrated Cable Health Monitoring System Luca Incarbone, Samuel Evain, Wafa Ben Hassen, Fabrice Auzanneau, Antoine Dupret, Yannick Bonhomme, Freddy Morel, Romain Gabet, Ludovic Solange, Armando Zanchetta, IEEE ICIEA 2015
Distributed Sensor Fusion for Wire Fault Location Using Sensor Clustering Strategy Wafa Ben Hassen, Fabrice Auzanneau, Luca Incarbone, François Pérès and Ayeley Tchangani International Journal of Distributed Sensor Networks
EMC impact of online embedded wire diagnosis Luca Incarbone, Fabrice Auzanneau, Stéphane Martin Conference: XXXI General Assembly of the International Union of Radio Science, At Beijing, China Download
Aircraft Electrical Wiring Monitoring System Gilles Millet, Serge Bruillot, Didier Dejardin, Nicolas Imbert, Fabrice Auzanneau, Luca Incarbone, Marc Olivas, Loic Vincent, Alain Cremizi, Sylvain Poignant Embedded Real Time Software and Systems, Toulouse Download
2013
Modelling Multi-Conductor Transmission Lines Using BLT Equation For Wire Diagnosis Olivas M., Genoulaz J. and Incarbone L. SAE Technical Paper 2013-01-2182, 2013
On-line diagnosis using Orthogonal Multi-Tone Time Domain Reflectometry in a lossy cable Wafa Ben Hassen, Fabrice Auzanneau, Luca Incarbone Systems, Signals & Devices (SSD), 2013 Download
Method to compensate dispersion effect applied to time domain reflectometry L. Sommervogel, L. El Sahmarany, L. Incarbone Electronics Letters (Volume:49 , Issue: 18 ) Download
OMTDR using BER estimation for ambiguities cancellation in ramified networks diagnosis Wafa Ben Hassen, Fabrice Auzanneau, Luca Incarbone, François Péres, Ayeley P Tchangani IEEE ISSNIP 2013 Download
2010
Optical sensing using silicon nanocrystals Luca Incarbone Abstract: Since silicon-nanocrystals were discovered, their particular properties are under study. Thanks to quantum confinement, silicon nanostructures can exhibit high conversion efficiency compared with Si-bulk. Recent studies have shown the possibility of using silicon nano-crystals in MOS (metal-oxide-semiconductor) or MIS (metal-insulator-semiconductor) structures for photodetection and photovoltaic purposes.
In this work we report spectral photocurrent of a MOS structure with silicon nano-crystals inside the oxide. The substrate used is made by CEA-LETI, silicon wafer with deposition of thin film of SiOx and thicker poly-silicon film. Silicon nano-crystals are formed by precipitation in the non-stoichiometric oxide(SiOx ). We report the method used to implement this. An analysis of the technique to make the test sample to evaluate optic-electric properties is followed by the presentation of the measurements made, and related considerations. We use two types of electric contact, some samples with a layer of ITO (Indium tin oxide) and others with semitransparent Chrome contact. The dimension of the structures is 100 × 100 µm² for optic-electric tests and 50nm diameter for AFM (atomic force measure) tests (not reported here).
Photocurrent spectra show different behaviours at forward and reverse biases. In case of forward biases, the photocurrent is weak (no peak appears). However, at reverse biases, a peak appears at 1.8 ~ 1.9eV (~ 650nm red light). Considering all the measurements reported and the results of other research works in photo-luminescence spectra, we suppose that the energy found corresponds to the band gap of Si-ncs. University of Sherbrooke (Canada) Download
2009
Visible-range photocurrent of silicon nanocrystals in a MOS structure Lino Eugene, Abdelkader Souifi, Luca Incarbone, Manel Troudi, Vincent Aimez, Dominique Drouin Nano and Giga Challenges in Electronics 2009 Download
